Noise specifications for junction field-effect transistors are presented in different ways depending on the particular semiconductor manufacturer. Arithmetic involved in converting these specifications to equivalent RMS noise in microvolts developed at the preamplifier input terminal is reviewed. These methods were useful for estimating the noise performance of high input impedance preamplifiers used with E-field antennas operating in the range of 1 KHz to 10 MHz. Both the JFET MPF-102 transistor and the COS/MOS CA3600 transistor array provided amplification for VLF receivers where the internally generated noise was well below the atmospheric noise level. The CA3600 transistor array provided better performance because of the more symmetrical complementary MOS transistor transfer characteristics than a single N-type biased JFET transistor. The CMOS amplifier resulted in self-compensating gain characteristics over a very wide temperature range from -55 to +125 C.